IPM/IGBT模块容量的选择

以三相逆变电路为例

Selection by switching SOA
All Mitsubishi IGBT-Modules have square
switching SOA up to double rated current

Module Pre-Selection Criteria

Selection by thermal consideration
•Step 1:Calculate the power loss in IGBT and FWDichips
based on worst case application conditions
•Step 2:Calculate the chip temperature Tjwhen this power is
dissipated in the IGBT-/FWDichips
•Step 3:Compare the calculated value of Tjwith the design
target Tj= 125°C
If Tj>125°C: select one module size bigger
If Tj<125°C: select one module size smaller

Thermal Dissipation

Tj(IGBT) = PQ(AV)×Rth(j-c)Q + Tc
Tj(FWD) = PF(AV)×Rth(j-c)F + Tc
TC = (PQ(AV) + PF(AV) )×Rth(c-f) + Tf
Tf= (PQ(AV) + PF(AV) )×Rth(f-a) +Ta

PQ(AV) : IGBT Static loss + Switching lossPF(AV) : FWD Static loss + Switching loss

Transient Maximum Junction Temp. Tj< 150℃
Normal operating maximum Junction Temp. Tj<125℃

Application examples

Step1:Enter the pre-selected module type

Step2:Enter the application conditions (default set: RG= RGmin)
Step3:Calculate
Step4:Analyze: Tj= 113,9°C (this is quite low compared to good
design praxis: Tj=125°C)
Step5:Repeat with one module size smaller: CM100DU-24F
Step6:Analyze Tj= 131,7°C (higher than design target Tj=125°C)
Step7:Reduce fswfrom 6 kHz to 5 kHz for CM100DU-24F
Result: Tj= 128°C is close to design target

上电/下电的时序